? 2007 ixys corporation, all rights reserved IXGQ240N30PB v ces = 300v i cp = 500a v ce(sat) 1.6v symbol test conditions maximum ratings v ces t j = 25c to 150c 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 240 a i cp t j 150 c, tp < 10 s 500 a i c(rms) lead current limit 75 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 240 a (rbsoa) clamped inductive load v ce v ces p d t c = 25c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 5.5 g ds99525c(06/07) for pdp applications polar tm high speed igbt symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 1ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 1 a t j = 125 c 200 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 120a, v ge = 15v, note 1 1.35 1.60 v t j = 125 c 1.40 v i c = 240a 1.85 v t j = 125 c 2.10 v g = gate c = collector e = emitter tab = collector to-3p g c e tab features ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? pdp screen drivers free datasheet http://www.datasheetlist.com/
ixys reserves the right to change limits, test conditions, and dimensions. IXGQ240N30PB ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 120a, v ce = 10v, note 1 75 130 s c ies 6900 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 435 pf c res 97 pf q g 225 nc q ge i c = 120a, v ge = 15v, v ce = 0.5 ? v ces 37 nc q gc 88 nc t d(on) 30 ns t r 70 ns t d(off) 104 ns t f 45 ns t d(on) 29 ns t r 104 ns t d(off) 103 ns t f 100 ns r thjc 0.25 c/w r thcs 0.21 c/w resistive switching times, t j = 25c i c = 120a, v ge = 15v v ce = 0.8 ? v ces , r g = 1 resistive switching times, t j = 125c i c = 120a, v ge = 15v v ce = 0.8 ? v ces , r g = 1 to-3p (ixgq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain free datasheet http://www.datasheetlist.com/
? 2007 ixys corporation, all rights reserved IXGQ240N30PB fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v ce - volts i c - amperes 7v 9v v ge = 15v 13v 11v fig. 3. output characteristics @ t j = 125oc 0 40 80 120 160 200 240 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 240a i c =120a i c = 60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6789101112131415 v ge - volts v ce - volts i c = 240a 120a 60a t j = 25oc fig. 6. input admittance 0 30 60 90 120 150 180 210 240 270 300 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc free datasheet http://www.datasheetlist.com/
ixys reserves the right to change limits, test conditions, and dimensions. IXGQ240N30PB fig. 7. transconductance 0 20 40 60 80 100 120 140 0 40 80 120 160 200 240 280 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 q g - nanocoulombs v ge - volts v ce = 150v i c = 120a i g = 10ma fig. 9. reverse-bias safe operating area 0 30 60 90 120 150 180 210 240 270 50 100 150 200 250 300 v ce - volts i c - amperes t j = 125oc r g =1 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes 1s 10s 1ms v ce(sat) limit t j = 150oc t c = 25oc single pulse 100s free datasheet http://www.datasheetlist.com/
? 2007 ixys corporation, all rights reserved IXGQ240N30PB ixys ref: ix5187(gq240n30pb)(76) 12-22-09 fig. 14. resistive turn-on rise time vs. collector current 30 40 50 60 70 80 90 100 110 60 65 70 75 80 85 90 95 100 105 110 115 120 i c - amperes t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 16. resistive turn-off switching times vs. junction temperature 30 40 50 60 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 95 100 105 110 115 120 125 130 135 140 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 240v i c = 120a i c = 60a fig. 17. resistive turn-off switching times vs. collector current 20 40 60 80 100 120 140 160 60 65 70 75 80 85 90 95 100 105 110 115 120 i c - amperes t f - nanoseconds 95 100 105 110 115 120 125 130 t d ( off ) - nanoseconds t f t d(off ) - - - - r g = 1 ? , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 30 40 50 60 70 80 90 100 110 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 240v i c = 120a i c = 60a fig. 18. resistive turn-off switching times vs. gate resistance 99 100 101 102 103 104 105 106 107 108 109 1.01.52.02.53.03.54.04.55.0 r g - ohms t f - nanoseconds 90 100 110 120 130 140 150 160 170 180 190 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 120a i c = 60a fig. 15. resistive turn-on switching times vs. gate resistance 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r g - ohms t r - nanoseconds 28 29 30 31 32 33 34 t d ( on ) - nanoseconds t f t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 60a i c = 120a i c = 60a free datasheet http://www.datasheetlist.com/
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